TSM900N06CH X0G
Manufacturer Product Number:

TSM900N06CH X0G

Product Overview

Manufacturer:

Taiwan Semiconductor Corporation

DiGi Electronics Part Number:

TSM900N06CH X0G-DG

Description:

MOSFET N-CHANNEL 60V 11A TO251
Detailed Description:
N-Channel 60 V 11A (Tc) 25W (Tc) Through Hole TO-251 (IPAK)

Inventory:

48855 Pcs New Original In Stock
12899864
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TSM900N06CH X0G Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Taiwan Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
90mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
TSM900

Datasheet & Documents

Additional Information

Other Names
TSM900N06CH X0G-DG
TSM900N06CHX0G
Standard Package
75

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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